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BSM15GD120DN2E3224BOSA1
BSM15GD120DN2E3224BOSA1
IGBT Modules BSM15GD120DN2E3224BOSA1
Infineon
BSM15GD120DN2E3224BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Part StatusLTB
Channel TypeN
ConfigurationHex
Maximum Power Dissipation (mW)145000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.15
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 25A 145000mW
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