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BSM100GD120DLCBOSA1
BSM100GD120DLCBOSA1
IGBT Modules BSM100GD120DLCBOSA1
Infineon
BSM100GD120DLCBOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
Pin Count19
AutomotiveNo
PCB changed19
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width61.5
Package Height17
Package Length121.5
Supplier PackageECONO3
Maximum Power Dissipation (mW)650000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)160
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.1
Description
Trans IGBT Module N-CH 1200V 160A 650000mW 19-Pin ECONO3
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