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BSM100GB120DN2KHOSA1
BSM100GB120DN2KHOSA1
IGBT Modules BSM100GB120DN2KHOSA1
Infineon
BSM100GB120DN2KHOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count7
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Height30.5
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)700000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)145
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2.5
Description
Trans IGBT Module N-CH 1200V 145A 700000mW 7-Pin 34MM-1
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