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APTGT200DA120D3G
APTGT200DA120D3G
IGBT Modules APTGT200DA120D3G
Microchip Technology
APTGT200DA120D3G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBox
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width62
Package Height30
Package Length108
Supplier PackageCase D-3
Maximum Power Dissipation (mW)1050
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)300
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 300A 1050mW 5-Pin Case D-3 Box
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