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APTGF50H60T1G
APTGF50H60T1G
IGBT Modules APTGF50H60T1G
Microchip Technology
APTGF50H60T1G
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count12
AutomotiveNo
PCB changed12
Part StatusObsolete
Channel TypeN
ConfigurationQuad
Package Width40.8
Package Height11.5
Package Length51.6
Supplier PackageCase SP-1
Maximum Power Dissipation (mW)250
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)65
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 600V 65A 250mW 12-Pin Case SP-1
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