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SIGC109T120R3LEX1SA2
SIGC109T120R3LEX1SA2
IGBT Chip SIGC109T120R3LEX1SA2
Infineon
SIGC109T120R3LEX1SA2
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width10.44
Package Height0.12
Package Length10.47
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die Wafer
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