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SIGC100T60R3ZJ
SIGC100T60R3ZJ
IGBT Chip SIGC100T60R3ZJ
Infineon
SIGC100T60R3ZJ
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
AutomotiveNo
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width9.73
Package Length10.39
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 600V Die
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