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NGTD28T65F2WP
NGTD28T65F2WP
IGBT Chip NGTD28T65F2WP
onsemi
NGTD28T65F2WP
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWJAR
Pin Count3
AutomotiveNo
TechnologyField Stop II|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height0.08
Package Length6
Supplier PackageDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)1.75
Description
Trans IGBT Chip N-CH 650V 3-Pin Die WJAR
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