Welcome to BEAM! Tel: +86-553-5896615
Language: Help
NGTD23T120F2WP
NGTD23T120F2WP
IGBT Chip NGTD23T120F2WP
onsemi
NGTD23T120F2WP
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWJAR
Pin Count3
AutomotiveNo
TechnologyField Stop II|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.18
Package Height0.1
Package Length5.38
Supplier PackageDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.2
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die WJAR
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13894
Manufacturer: Microchip Technology
Inventory: 0
$0.69938
Manufacturer: Microchip Technology
Inventory: 0
$0.22099
Manufacturer: STMicroelectronics
Inventory: 0
$0.43817
Manufacturer: Texas Instruments
Inventory: 3000
$3.38698
Manufacturer: Texas Instruments
Inventory: 0
$0.02569
Manufacturer: Texas Instruments
Inventory: 0
$1.32739
Manufacturer: Texas Instruments
Inventory: 6000
$1.07048
Manufacturer: STMicroelectronics
Inventory: 1920
$3.53257
Manufacturer: ADI
Inventory: 0
$1.41173