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IRG7PG35UPBF
IRG7PG35UPBF
IGBT Chip IRG7PG35UPBF
Infineon
IRG7PG35UPBF
--
Diodes, Transistors and Thyristors
IGBT Chip
IRG7PG35UPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)210000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1000
Maximum Continuous Collector Current (A)55
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.9
Description
Trans IGBT Chip N-CH 1000V 55A 210000mW Tube
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