Welcome to BEAM! Tel: +86-553-5896615
Language: Help
HGTP10N120BN
HGTP10N120BN
IGBT Chip HGTP10N120BN
onsemi
HGTP10N120BN
--
Diodes, Transistors and Thyristors
IGBT Chip
HGTP10N120BN.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Supplier PackageTO-220
Standard Package NameTO-220
Maximum Power Dissipation (mW)298000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)35
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)2.45
Description
Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220 Tube
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13929
Manufacturer: Microchip Technology
Inventory: 0
$0.70114
Manufacturer: Microchip Technology
Inventory: 0
$0.22155
Manufacturer: STMicroelectronics
Inventory: 0
$0.43927
Manufacturer: Texas Instruments
Inventory: 3000
$3.39553
Manufacturer: Texas Instruments
Inventory: 0
$0.02576
Manufacturer: Texas Instruments
Inventory: 0
$1.108
Manufacturer: Texas Instruments
Inventory: 6000
$1.07318
Manufacturer: STMicroelectronics
Inventory: 1920
$3.54148
Manufacturer: ADI
Inventory: 0
$1.41529