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FGH4L50T65SQD
FGH4L50T65SQD
IGBT Chip FGH4L50T65SQD
onsemi
FGH4L50T65SQD
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
PackagingTube
AutomotiveNo
TechnologyField Stop|Trench
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Maximum Power Dissipation (mW)268000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 80A 268000mW Tube
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