Welcome to BEAM! Tel: +86-553-5896615
Language: Help
IGBT Chip FGAF30S65AQ
onsemi
FGAF30S65AQ
--
Diodes, Transistors and Thyristors
IGBT Chip
FGAF30S65AQ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)83000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.4
Description
Trans IGBT Chip N-CH 650V 60A 83000mW Tube
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13957
Manufacturer: Microchip Technology
Inventory: 0
$0.70256
Manufacturer: Microchip Technology
Inventory: 0
$0.222
Manufacturer: STMicroelectronics
Inventory: 0
$0.44016
Manufacturer: Texas Instruments
Inventory: 3000
$3.40241
Manufacturer: Texas Instruments
Inventory: 0
$0.02581
Manufacturer: Texas Instruments
Inventory: 0
$1.11024
Manufacturer: Texas Instruments
Inventory: 6000
$1.07535
Manufacturer: STMicroelectronics
Inventory: 1920
$3.54866
Manufacturer: ADI
Inventory: 0
$1.41815