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BUP213
BUP213
IGBT Chip BUP213
Infineon
BUP213
--
Diodes, Transistors and Thyristors
IGBT Chip
BUP213.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Supplier PackageTO-220AB
Standard Package NameTO-220
Maximum Power Dissipation (mW)200000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)32
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Chip N-CH 1200V 32A 200000mW 3-Pin(3+Tab) TO-220AB
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