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BIDW50N65T
BIDW50N65T
IGBT Chip BIDW50N65T
Bourns
BIDW50N65T
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Diodes, Transistors and Thyristors
IGBT Chip
BIDW50N65T.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
TechnologyField Stop|Trench
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)416
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)100
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 650V 100A 416mW Tube
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