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Gate and Power Drivers 2ED21834S06JXUMA1
Infineon
2ED21834S06JXUMA1
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| Type | MOSFET|IGBT |
| ECCN (US) | EAR99 |
| Bridge Type | Half Bridge |
| Driver Type | Low Side|High Side |
| Part Status | Active |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Driver Configuration | Non-Inverting |
| Maximum Fall Time (ns) | 30 |
| Maximum Rise Time (ns) | 30 |
| Peak Output Current (A) | 2.5(Typ) |
| Input Logic Compatibility | 15V|5V|3.3V|TTL|LSTTL|CMOS |
| High and Low Sides Dependency | Independent |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Turn-On Delay Time (ns) | 35 |
| Maximum Turn-Off Delay Time (ns) | 35 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 300 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 20 |
| Minimum Operating Supply Voltage (V) | 10 |
| Typical Input Low Threshold Voltage (V) | 0.9 |
| Typical Input High Threshold Voltage (V) | 2.1 |
| Description |
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