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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ZXTP2012Z-13R
ZXTP2012Z-13R
GP BJT ZXTP2012Z-13R
Diodes Incorporated
ZXTP2012Z-13R
--
Diodes, Transistors and Thyristors
GP BJT
ZXTP2012Z-13R.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Minimum DC Current Gain100@10mA@1V|100@2A@1V|45@5A@1V|10@10A@1V
Supplier Temperature GradeCommercial
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Maximum DC Collector Current (A)4.3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.05@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.02@10mA@0.1A|0.065@100mA@1A|0.11@200mA@2A|0.215@500mA@5A
Description
Trans GP BJT PNP 60V 4.3A 2100mW 4-Pin(3+Tab) SOT-89 T/R
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