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GP BJT ZXTC4591AMCQTA
Diodes Incorporated
ZXTC4591AMCQTA
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | Yes |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Active |
| Configuration | Dual Dual Collector |
| Package Width | 2 |
| Package Height | 0.78 |
| Package Length | 3 |
| Product Category | Bipolar Power |
| Supplier Package | WDFN EP |
| Minimum DC Current Gain | 300@1mA@5V|300@500mA@1V|200@1A@5V|35@2A@5V@NPN|300@100mA@5V|250@500mA@5V|160@1A@5V|30@2A@5V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2450 |
| Maximum DC Collector Current (A) | 2.5@NPN|2@PNP |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@0.1A@1A@NPN|1.1@50mA@1A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@50mA@0.5A|0.5@0.1A@1A@NPN|0.2@1mA@0.1A|0.35@20mA@0.5A|0.5@100mA@1A@PNP |
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