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TN3019A
TN3019A
GP BJT TN3019A
onsemi
TN3019A
--
Diodes, Transistors and Thyristors
GP BJT
TN3019A.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.93(Max)
Package Height7.87(Max)
Package Length4.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-226
Minimum DC Current Gain50@0.1mA@10V|90@10mA@10V|100@150mA@10V|15@1A@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@15mA@150mA|0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 3-Pin TO-226 Bulk
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