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GP BJT SMBTA92E6327HTSA1
Infineon
SMBTA92E6327HTSA1
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | LTB |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 25@1mA@10V|40@10mA@10V|25@30mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 360 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 300 |
| Maximum Collector Cut-Off Current (nA) | 250 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@2mA@20mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@2mA@20mA |
| Description |
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