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GP BJT PMEM4020APD,115
NXP
PMEM4020APD,115
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 300@1mA@5V|300@100mA@5V|250@500mA@5V|160@1A@5V|50@2A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 600 |
| Maximum DC Collector Current (A) | 1.3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.12@1mA@100mA|0.145@50mA@500mA|0.26@100mA@1A|0.53@200mA@2A |
| Description |
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