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GP BJT PMBTA42DS,125
Nexperia
PMBTA42DS,125
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 40@30mA@10V|25@1mA@10V|40@10mA@10V |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 700 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 300 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@2mA@20mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@2mA@20mA |
| Description |
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