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GP BJT PBSS5580PA,115
Nexperia
PBSS5580PA,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2 |
| Package Height | 0.61(Max) |
| Package Length | 2 |
| Product Category | Bipolar Power |
| Supplier Package | HUSON |
| Minimum DC Current Gain | 180@0.5A@2V|160@1A@2V|140@2A@2V|70@4A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 110(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@200mA@4A|0.9@10mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.12@50mA@1A|0.32@400mA@4A|0.42@200mA@4A|0.06@50mA@0.5A |
| Description |
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