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GP BJT PBSS4240DPN,115
Nexperia
PBSS4240DPN,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 75@2A@5V@NPN|300@500mA@5V|200@1A@5V|300@100mA@5V|250@500mA@5V|160@1A@5V|50@2A@5V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1100 |
| Maximum DC Collector Current (A) | 1.35@NPN|1.1@PNP |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@1A@NPN|1.1@50mA@1A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@200mA@2A@NPN|0.53@200mA@2A@PNP |
| Description |
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