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GP BJT PBSS4032SPN,115
Nexperia
PBSS4032SPN,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Collector |
| Package Width | 4(Max) |
| Package Height | 1.45(Max) |
| Package Length | 5(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SO |
| Minimum DC Current Gain | 300@500mA@2V|300@1A@2V|250@2A@2V|200@4A@2V|150@6A@2V@NPN|200@500mA@2V|200@1A@2V|150@2A@2V|40@5A@2V@PNP|60@4A@2V |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2300 |
| Maximum DC Collector Current (A) | 5.7@NPN|4.8@PNP |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 115(Typ)@PNP|140(Typ)@NPN |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@100mA@1A|1.1@400mA@4A@PNP|1.05@400mA@4A@NPN |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.125@50mA@1A|0.18@10mA@1A|0.21@40mA@2A|0.25@400mA@4A|0.375@40mA@4A|0.45@300mA@6A@NPN|0.165@50mA@1A|0.24@10mA@1A|0.3@40mA@2A|0.39@400mA@4A|0.45@200mA@4A|0.51@250mA@5A@PNP |
| Description |
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