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GP BJT NSVEMX1DXV6T1G
onsemi
NSVEMX1DXV6T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Flat |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.2 |
| Package Height | 0.55 |
| Package Length | 1.6 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-563 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 120@1mA@6V |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 180(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@5mA@50mA |
| Description |
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