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GP BJT NST65010MW6T1G
onsemi
NST65010MW6T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 0.9 |
| Package Length | 2 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-88 |
| Standard Package Name | SC |
| Minimum DC Current Gain | 220@2mA@5V |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 380 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 65 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA |
| Description |
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