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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NJVMJB45H11T4G
NJVMJB45H11T4G
GP BJT NJVMJB45H11T4G
onsemi
NJVMJB45H11T4G
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Diodes, Transistors and Thyristors
GP BJT
NJVMJB45H11T4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPYes
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryBipolar Power
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@2A@1V|40@4A@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)40(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT PNP 80V 10A 2000mW Automotive 3-Pin(2+Tab) D2PAK T/R
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