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GP BJT MJD32CTF_SBDD002
onsemi
MJD32CTF_SBDD002
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 2 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 6.3(Max) |
| Package Height | 2.4(Max) |
| Package Length | 6.8(Max) |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 25@1A@4V|10@3A@4V |
| Maximum Base Current (A) | 1 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1560 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.2@375mA@3A |
| Description |
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