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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5660
JANTXV2N5660
GP BJT JANTXV2N5660
Microchip Technology
JANTXV2N5660
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5660.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain40@50mA@2V|40@0.5A@5V|15@1A@5V|5@2A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.5@0.4A@2A|1.2@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.4A@2A|0.4@0.1A@1A
Description
Trans GP BJT NPN 200V 2A 2000mW 3-Pin(2+Tab) TO-66 Tray
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