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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N4930
JANTXV2N4930
GP BJT JANTXV2N4930
Microchip Technology
JANTXV2N4930
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N4930.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain30@0.1mA@10V|40@1mA@10V|40@10mA@10V|50@30mA@10V|30@50mA@20V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)200
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1.2@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)1.2@3mA@30mA|1@1mA@10mA
Description
Trans GP BJT PNP 200V 0.2A 1000mW 3-Pin TO-39 Bag
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