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GP BJT JANTXV2N4854
Microchip Technology
JANTXV2N4854
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | PNP|NPN |
| EU RoHS | Not Compliant |
| Diameter | 9.4(Max) |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Height | 4.7(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-78 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 35@300mA@10V|100@150mA@10V|75@10mA@10V|50@1mA@10V|35@0.1mA@10V|50@150mA@1V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 600 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.25@15mA@150mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA |
| Description |
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