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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTX2N3499U4
JANTX2N3499U4
GP BJT JANTX2N3499U4
Microchip Technology
JANTX2N3499U4
--
Diodes, Transistors and Thyristors
GP BJT
JANTX2N3499U4.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.91(Max)
Package Length3.94(Max)
Product CategoryBipolar Power
Supplier PackageCase U4
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|1.4@30mA@300mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.6@30mA@300mA
Description
Trans GP BJT NPN 100V 0.5A 1000mW 3-Pin Case U4 Tray
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