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GP BJT JANTX2N2605
Microchip Technology
JANTX2N2605
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Not Compliant |
| Diameter | 5.84(Max) |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Height | 2.7(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TO-46 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 100@10uA@5V|150@500uA@5V|100@10mA@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 400 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 70 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@500uA@10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@500uA@10mA |
| Description |
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