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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N5154U3
JANSR2N5154U3
GP BJT JANSR2N5154U3
Microchip Technology
JANSR2N5154U3
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N5154U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width10.16
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Minimum DC Current Gain40@5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@250mA@2.5A|2.2@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.75@250mA@2.5A|1.5@500mA@5A
Description
Trans GP BJT NPN 80V 2A 1000mW 3-Pin SMD-0.5 Tray
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