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GP BJT JANS2N5339U3
Microchip Technology
JANS2N5339U3
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 7.65(Max) |
| Package Height | 3.06(Max) |
| Package Length | 10.29(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-276AA |
| Minimum DC Current Gain | 60@0.5A@2V|60@2A@2V|40@5A@2V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.2A@2A|1.8@0.5A@5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.7@0.2A@2A|1.2@0.5A@5A |
| Description |
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