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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N5663
JAN2N5663
GP BJT JAN2N5663
Microchip Technology
JAN2N5663
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N5663.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain25@50mA@2V|25@0.5A@5V|15@1A@5V|5@2A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)400
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1.2@0.1A@1A|1.5@0.4A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.1A@1A|0.8@0.4A@2A
Description
Trans GP BJT NPN 300V 2A 1000mW 3-Pin TO-5 Bag
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