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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3737
JAN2N3737
GP BJT JAN2N3737
Microchip Technology
JAN2N3737
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3737.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height2.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-46
Standard Package NameTO
Minimum DC Current Gain35@10mA@1V|40@150mA@1V|40@500mA@1V|20@1A@1.5V|20@1.5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|1@15mA@150mA|1.2@50mA@500mA|1.4@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.3@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A
Description
Trans GP BJT NPN 40V 1.5A 500mW 3-Pin TO-46 Bag
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