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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N2369AUB
JAN2N2369AUB
GP BJT JAN2N2369AUB
Microchip Technology
JAN2N2369AUB
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N2369AUB.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA
Description
Trans GP BJT NPN 15V 360mW 4-Pin Case UB Waffle
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