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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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HBDM60V600W-7
HBDM60V600W-7
GP BJT HBDM60V600W-7
Diodes Incorporated
HBDM60V600W-7
--
Diodes, Transistors and Thyristors
GP BJT
HBDM60V600W-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width1.3
Package Height0.95
Package Length2.15
Product CategoryBipolar Small Signal
Supplier PackageSOT-363
Standard Package NameSOT-26
Minimum DC Current Gain250@10mA@1V|100@100mA@1V@NPN|100@100uA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V@PNP
Number of Elements per Chip2
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.5@NPN|0.6@PNP
Maximum Emitter Base Voltage (V)6@NPN|5.5@PNP
Maximum Collector Base Voltage (V)80@NPN|60@PNP
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60@PNP|65@NPN
Maximum Base Emitter Saturation Voltage (V)0.95@5mA@100mA@NPN|0.95@15mA@150mA|1.3@50mA@500mA@PNP
Maximum Collector-Emitter Saturation Voltage (V)0.4@10mA@100mA@NPN|0.3@15mA@150mA|0.5@50mA@500mA@PNP
Description
Trans GP BJT NPN/PNP 65V 0.5A/0.6A 200mW 6-Pin SOT-363 T/R
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