Welcome to BEAM! Tel: +86-553-5896615
Language: Help
BCP68E6327XT
BCP68E6327XT
GP BJT BCP68E6327XT
Infineon
BCP68E6327XT
--
Diodes, Transistors and Thyristors
GP BJT
BCP68E6327XT.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TypeNPN
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
ConfigurationSingle Dual Collector
Product CategoryBipolar Power
Minimum DC Current Gain85@0.5A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)20
Maximum Collector-Emitter Saturation Voltage (V)0.5@100mA@1A
Description
Trans GP BJT NPN 20V 1A 4-Pin(3+Tab) SOT-223 T/R
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 10000
$0.95668
Manufacturer: Microchip Technology
Inventory: 0
$0.69448
Manufacturer: Microchip Technology
Inventory: 4000
$2.45335
Manufacturer: STMicroelectronics
Inventory: 5880
$0.67353
Manufacturer: Texas Instruments
Inventory: 3000
$3.36325
Manufacturer: Texas Instruments
Inventory: 2500
$0.14414
Manufacturer: Texas Instruments
Inventory: 3000
$1.31809
Manufacturer: Texas Instruments
Inventory: 6000
$1.06298
Manufacturer: STMicroelectronics
Inventory: 1920
$3.50782
Manufacturer: ADI
Inventory: 0
$1.40183