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GP BJT BCM847BS-7
Diodes Incorporated
BCM847BS-7
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.75 |
| Type | NPN |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Configuration | Dual |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 200@2mA@5V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Base Emitter Saturation Voltage (V) | 0.755(Typ)@0.5mA@10mA|0.905(Typ)@5mA@100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@0.5mA@10mA|0.4@5mA@100mA |
| Description |
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