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GP BJT 2SD1048-6-TB-E
onsemi
2SD1048-6-TB-E
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.65(Max) |
| Package Height | 1.25(Max) |
| Package Length | 3.05(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-59 |
| Standard Package Name | SC |
| Minimum DC Current Gain | 200@50mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum DC Collector Current (A) | 0.7 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 250(Typ) |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 15 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.035@0.5mA@5mA|0.12@10mA@100mA |
| Description |
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