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GP BJT 2SA1881-6-TB-E
onsemi
2SA1881-6-TB-E
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| Type | PNP |
| EU RoHS | Supplier Unconfirmed |
| Material | Si |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 200@50mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 250 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 15 |
| Maximum Transition Frequency (MHz) | 300(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@25mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.025@0.5mA@5mA|0.24@25mA@500mA |
| Description |
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