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2SA1641S-TL-E
2SA1641S-TL-E
GP BJT 2SA1641S-TL-E
onsemi
2SA1641S-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
ConfigurationSingle
Product CategoryBipolar Power
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Base Emitter Saturation Voltage (V)1.3@250mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.4@250mA@5A
Description
Trans GP BJT PNP 20V 8A 1000mW
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