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2SA1371D-AE
2SA1371D-AE
GP BJT 2SA1371D-AE
onsemi
2SA1371D-AE
--
Diodes, Transistors and Thyristors
GP BJT
2SA1371D-AE.pdf
Specification
Product AttributeAttribute Value
TypePNP
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
Part StatusUnconfirmed
ConfigurationSingle
Product CategoryBipolar Power
Minimum DC Current Gain60@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@2mA@20mA
Description
Trans GP BJT PNP 300V 0.1A 1000mW 3-Pin Case MP
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