Welcome to BEAM! Tel: +86-553-5896615
Language: Help
2N5682E3
2N5682E3
GP BJT 2N5682E3
Microchip Technology
2N5682E3
--
Diodes, Transistors and Thyristors
GP BJT
2N5682E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSCompliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Minimum DC Current Gain40@0.25A@2V|20@500mA@2V|5@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)1.1@25mA@250mA|1.3@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@25mA@250mA|1@50mA@500mA
Description
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-39
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13871
Manufacturer: Microchip Technology
Inventory: 0
$0.6982
Manufacturer: Microchip Technology
Inventory: 0
$0.22062
Manufacturer: STMicroelectronics
Inventory: 0
$0.43743
Manufacturer: Texas Instruments
Inventory: 3000
$3.38129
Manufacturer: Texas Instruments
Inventory: 0
$0.02565
Manufacturer: Texas Instruments
Inventory: 0
$1.32516
Manufacturer: Texas Instruments
Inventory: 6000
$1.06868
Manufacturer: STMicroelectronics
Inventory: 1920
$3.52663
Manufacturer: ADI
Inventory: 0
$1.40935