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2N5410
2N5410
GP BJT 2N5410
Microchip Technology
2N5410
--
Diodes, Transistors and Thyristors
GP BJT
2N5410.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MountingStud
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed4
Part StatusObsolete
ConfigurationSingle
Package Width11.12(Max)
Package Length12.83(Max)
Product CategoryBipolar Power
Supplier PackageTO-111
Number of Elements per Chip1
Maximum Power Dissipation (mW)52000
Maximum DC Collector Current (A)5
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.6@0.2mA@2mA
Description
Trans GP BJT PNP 80V 5A 52000mW 4-Pin TO-111
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