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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2N3743JANTXV
2N3743JANTXV
GP BJT 2N3743JANTXV
Microchip Technology
2N3743JANTXV
--
Diodes, Transistors and Thyristors
GP BJT
2N3743JANTXV.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain30@0.1mA@10V|40@1mA@10V|40@10mA@10V|50@30mA@10V|30@50mA@20V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1.2@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)1.2@3mA@30mA|1@1mA@10mA
Description
Trans GP BJT PNP 300V 0.2A 1000mW 3-Pin TO-39 Bag
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