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2DB1188Q-13
2DB1188Q-13
GP BJT 2DB1188Q-13
Diodes Incorporated
2DB1188Q-13
--
Diodes, Transistors and Thyristors
GP BJT
2DB1188Q-13.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
Minimum DC Current Gain120@0.5A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)32
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2A@2A
Description
Trans GP BJT PNP 32V 2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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